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Strain-Induced Effects in Advanced MOSFETs - Computational Microelectronics Viktor Sverdlov Softcover reprint of the original 1st ed. 2011 edition
Strain-Induced Effects in Advanced MOSFETs - Computational Microelectronics
Viktor Sverdlov
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. A rigorous overview of transport modeling in strained devices is given.
252 pages, 50 Tables, black and white; XIV, 252 p.
| Media | Books Paperback Book (Book with soft cover and glued back) |
| Released | August 23, 2016 |
| ISBN13 | 9783709119334 |
| Publishers | Springer Verlag GmbH |
| Pages | 252 |
| Dimensions | 150 × 220 × 10 mm · 455 g |
| Language | German |
See all of Viktor Sverdlov ( e.g. Hardcover Book and Paperback Book )