Teoreticheskoe Issledovanie Tonkikh Plenok Karbida Kremniya: Ikh Struktura I Svoystva - Eliseeva Natal'ya - Books - LAP LAMBERT Academic Publishing - 9783659136108 - June 22, 2012
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Eliseeva Natal'ya
Teoreticheskoe Issledovanie Tonkikh Plenok Karbida Kremniya: Ikh Struktura I Svoystva Russian edition

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Karbid kremniya predstavlyaet soboy perspektivnyy material, shiroko primenyaemyy v poluprovodnikovoy tekhnike. On obladaet ryadom unikal'nykh svoystv,chto mozhet pozvolit' uluchshit' prakticheski vse kharakteristiki priborov silovoy i tsifrovoy elektroniki, sozdannykh na ego osnove. Razvitiyu poluprovodnikovoy SiC-elektroniki prepyatstvuet nizkoe kachestvo vyrashchivaemykh monokristallov karbida kremniya. Poluchenie kachestvennykh malodefektnykh kristallov SiC opredelennogo politipa sopryazheno s ryadom trudnostey, i odna iz nikh ? effektivnaya sistema upravleniya protsessom rosta kristalla. Osnovnaya ideya dannoy raboty zaklyuchalas' v izuchenii struktury, svoystv i vozmozhnosti polucheniya grafenopodobnogo 2D SiC. Bylo izucheno vliyanie chisla sloev na vozmozhnost' perekhoda iz odnoy modifikatsii karbida kremniya v druguyu. Byli izucheny sistemy 2D SiC na plastinkakh Mg (0001) i Zr (0001), kak na potentsial'nykh materialakh dlya podlozhek pri vyrashchivanii monosloya, a takzhe issledovano povedenie defektov v monosloe SiS i ikh vliyanie na fizicheskie svoystva materiala.

Media Books     Paperback Book   (Book with soft cover and glued back)
Released June 22, 2012
ISBN13 9783659136108
Publishers LAP LAMBERT Academic Publishing
Pages 68
Dimensions 150 × 4 × 225 mm   ·   119 g
Language German  

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