Low Power and Reliable SRAM Memory Cell and Array Design - Springer Series in Advanced Microelectronics - Koichiro Ishibashi - Books - Springer-Verlag Berlin and Heidelberg Gm - 9783642270185 - November 27, 2013
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Koichiro Ishibashi
Low Power and Reliable SRAM Memory Cell and Array Design - Springer Series in Advanced Microelectronics 2011 edition

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Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.

310 pages, biography

Media Books     Paperback Book   (Book with soft cover and glued back)
Released November 27, 2013
ISBN13 9783642270185
Publishers Springer-Verlag Berlin and Heidelberg Gm
Pages 144
Dimensions 155 × 235 × 8 mm   ·   226 g
Language German  
Editor Ishibashi, Koichiro
Editor Osada, Kenichi

Mere med samme udgiver

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