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Modeling Annular and Oval (Racetrack) Mosfets Mike Peralta
Modeling Annular and Oval (Racetrack) Mosfets
Mike Peralta
Modeling the Effective Mobility and the effective W and L dependence as well as the capacitances of an annular (circular) mosfet requires an analysis from first principles. That is what is presented in this monograph. Following the same line of reasoning also allows us to model the behavior of oval (racetrack) geometry mosfets. The oval (racetrack) geometry is modeled as a weighted average of a circular portion and a straight conventional rectangular portion of the total racetrack portion of the MOSFET.
ADVANTAGES OF ANNULAR & OVAL MOSFETS:
High Tolerance To Radiation And Total Ionization Dose
Leakage Paths Are Greatly Reduced And Even Eliminated
Hot Carrier Effects Are Significantly Reduced
Flicker 1/f Noise Is Reduced
| Media | Books Paperback Book (Book with soft cover and glued back) |
| Released | October 8, 2018 |
| ISBN13 | 9781727796926 |
| Publishers | Createspace Independent Publishing Platf |
| Pages | 46 |
| Dimensions | 152 × 229 × 3 mm · 77 g |
| Language | English |
See all of Mike Peralta ( e.g. Paperback Book and CD )