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Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization - Semiconductors and Semimetals Willardson
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Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization - Semiconductors and Semimetals
Willardson
Focusing on the physics of the annealing kinetics of the damaged layer, this book presents an overview of characterization techniques and a comparison of the information on annealing kinetics. It also provides basic knowledge of ion implantation-induced defects; focuses on physical mechanisms of defect annealing; and more.
316 pages
| Media | Books Hardcover Book (Book with hard spine and cover) |
| Released | May 22, 1997 |
| ISBN13 | 9780127521466 |
| Publishers | Elsevier Science Publishing Co Inc |
| Pages | 316 |
| Dimensions | 152 × 229 × 19 mm · 616 g |
| Series Editor | Weber, Eicke R. (Fraunhofer-Institut fur Solare Energiesysteme ISE, Freiburg, Germany) |
| Series Editor | Willardson, Robert K. (WILLARDSON CONSULTING SPOKANE, WASHINGTON) |
